Researchers develop a new technique to color-tune monolithic GaN LEDs

Researchers from Lehigh University, West Chester University, Osaka University and the University of Amsterdam developed a new technique to color-tune Gallium-Nitride (GaN) LEDs.

The new technique is based on Atomic Emission Manipulation under Current Injection. The researchers demonstrated that it is possible to attain red, green and blue emissions originating from just one GaN LED-structure that uses doping with a single type of rare earth ion, Europium (Eu).

This technique could be used to achieve tunable LED lighting using a single monolithic LED chip, and also for micro-LED displays as it could allow for higher density of pixels - because there would be no need for subpixels to achieve a full-color pixel.