Researchers propose vertically integrated GaN nanowire FETs and InGaN LEDs for future MicroLED displays

Researchers from the Rochester Institute of Technology managed to vertically integrate nanowire gallium nitride (GaN) field-effect transistors (FETs) and indium gallium nitride (InGaN) LEDs. Such technology could be useful for future Micro-LED displays.

The researchers say that this integration could provide to enable smaller structures and more cost-effective processes compared to alternative light emitting architectures - such as high-electron-mobility transistor (HEMT) combined with LEDs.

To construct each device, the researchers used an average of 45 vertical nanowires. The researchers used a top-down approach (dry etching of heterostructured epitaxial material) to create the wires.