The MicroLED Industry Association to host an academic roundup webinar
On October 19th the MicroLED Industry Association will host a private academic roundup webinar, focused on the latest microLED research at leading academic institutes. During the webinar, we will hear from three world-class researchers that detail their latest projects and recent advances.
The webinar will feature three world-leading speakers, and will also be open to a Q&A session.
- Prof. Steven DenBaars, from the University of California, Santa Barbara (UCSB) – “Recent Advances in Micron Scale III-Nitrides based RGB MicroLEDs”
- Prof. Kei May LAU, from Hong Kong University of Science & Technology (HKUST) - (lecture topic TBD)
- Prof. Kazuhiro Ohkawa from the King Abdullah University of Science and Technology (KAUST) – “Highly efficient InGaN-based micro-LEDs”
KAUST researchers develops highly-efficient GaN and InGaN red microLED devices
Researchers from King Abdullah's University of Science & Technology (KAUST) in Saudi Arabia developed GaN and InGan red microLED devices that are highly efficient.
The researchers managed to increase the efficiency of their previous design by a new chemical treatment that removes damages at the microLED sidewalls (created during the fabrication process) and also retains the high crystal quality at the InGaN and GaN sidewall interfaces.
ALLOS and researchers from KAUST to develop high efficiency nitride-based red LEDs on silicon wafers
GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon substrates.
Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)- based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOS's GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUST's red LED stack.
