Kyocera Corporation announced that it has successfully developed a new process technology to produce microLED (and micro-laser) devices. The process is based on lateral growth of GaN layer on a silicon wafer, in a way that limits defects in most of the area.

The basic process has three steps. First you grow a GaN layer on silicon. The second step is to apply a mask with a has a horizontal gap. The third step is to continue growing the GaN layer. The defects are concentrated in the opening nucleus, but the rest of the growth area remains almost defect free. The actual microLED devices are fabricated from the low-defect region.

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California-based integrator Just One Touch/Video & Audio Center announced that it has installed the first-ever residential installation of Samsung's latest 219-inch microLED The Wall TV. The price of this project was about $800,000. The installation took three days to complete.

The 219-inch display is made from the IW-008A modules, which offer a 0.84 mm pixel pitch, 120Hz refresh rate, a peak brightness of 2,000 nits and a maximum brightness of 250 nits.

Belgium-based microLED microdisplay developer MICLEDI has demonstrated 630nm wavelength red GaN with a full-width-half-max (FWHM) in the range of 50nm. New red microdisplay samples are projected to be available to customers before the end of the year.

MICLEDI says that its red GaN device is compatible with the company's proprietary CMOS-fab technology and it follows the identical process recipe of the company’s blue and green arrays for consistency. The new red device is tailored for 300 mm processes for high-volume mass production.