iBeam Materials shows how to deposit both FETs and microLEDs directly on flexible metal foil substrates
iBeam Materials announced that it had successfully demonstrated the ability to produce high-performance GaN Field-Effect Transistors (FETs) directly on thin, flexible and rollable metal foil substrates.
This new technology complements iBeam's microLED deposition technology (demonstrated in the video above), and these FETs can be integrated with microLED chips in a side-by-side architecture. Both FETs and MicroLEDs are deposited on the flexible substrate without any transfer process.