Technical / research - Page 10

Taiwan's Jasper Display Corp (JDC) unveiled its new silicon micro-LED backplane, the eSP70, which reportedly features high brightness and contrast possible. JDC's eSP70 is capable of FHD (1920x1080) resolution using a pixel pitch of 8 um and JDC says that it offers excellent current uniformity via a proprietary current source pixel (uniformity is better than 1% across the array).

JDC demonstrated the eSP70 using micro-LEDs provided by glō. The company says that this is the industry's first specialized micro-LED ready silicon. JDC's technology can be customized and it can be suitable for a wide range of applications, from AR headsets to automotive headlights. JDC's eSP70's 8" are now shipping.

Researchers from Fudan University, Shanghai develop a high-bandwidth white-light based system made from a blue gallium nitride (GaN) micro-LED with a yellow-emitting perovskite quantum dots. This system could be a way to enable high-speed real-time visible light communication (VLC).

The researchers used a 80 x 80 um blue-emitting micro-LED that has a modulation bandwidth of about 160 MHz and a peak emission wavelength of ~445 nm. The white-light system (following the perovskite QD conversion) achieves 85 Mhz - which means a maximum data rate of 300 Mbps.

US-based Solar-Tectic has launched a new low-temperature backplane technology that could replace LTPS in future high-end mobile displays and bridge the performance gap between IGZO and LTPS.

The main target application for this new backplane are OLED displays, but the company says that its new technology could also be used in micro-LED displays. Solar-Tectic process, called LT1CS (Low temperature single crystal silicon) is a silicon based technology that creates highly oriented c-axis aligned or "textured" silicon crystals. Solar-Tectic says that the performance of LT1CS backplanes will be higher than IGZO performance.

Veeco and ALLOS Semiconductors have completed their micro-LED strategic initiative and demonstrated 200mm GaN-on-Si wafers for blue and green micro-LED production. Veeco transferred ALLOS' proprietary epitaxy technology onto Veeco's Propel Single-Wafer MOCVD System to enable micro-LED production on existing silicon production lines.

ALLOS says that it now has an MOCVD technology that is capable of high yielding GaN Epitaxy that meets all the requirements for processing micro-LED devices in 200 millimeter silicon production lines. Within one month the two companies managed to establish the ALLOS technology on Veeco's Propel systems and have achieved crack-free, meltback-free wafers with less than 30 micrometers bow, high crystal quality, superior thickness uniformity and wavelength uniformity of less than one nanometer.

Researchers from Korea's Institute of Machinery and Materials (KIMM) developed a new micro-LED manufacturing process based on a roll-to-roll transfer process. The researcher say that this kind of process may enable fast and reliable production.

The patented process is said to be much faster than conventional process, using an "ink-like" placement mechanism. The researchers say that in this process you can place more than 10,000 LEDs in a second - compared to about 1-10 LEDs per second in a conventional process.