Porotech developed the world's first native InGaN red microLED microdisplay
Porous-GaN material platform developer Porotech announced that it has created the world's first microLED microdisplay based on a native red InGaN LED. The microdisplay is a 0.55" diagonal panel with a resolution of 960x540.
Porotech says that its native InGaN red LEDs will offer higher efficiency than currently-used AlInGaP red LEDs. Developing an RGB microdisplay all from InGaN chips will also offer easier driving and process design.
Porotech to supply JBD with red InGaN epiwafers for microLED displays
Porous-GaN material platform developer Porotech announced a partnership with Jade Bird Display (JBD). Under the agreement, Porotech provide JBD with its porous gallium nitride (GaN) technology.
Porotech says its native red InGaN LED epiwafer is not commercial. JBD now plans to use Porotech's porous GaN templates to manufacture InGaN-based red micro-LED displays for use in applications such as VR/AR headsets, AR smart sports goggles and head-up displays.
GaN microLED material developer Porotech raises £3 million
Porous-GaN material platform developer Porotech raised £3 million as it accelerates its microLED production technology development.
Porotech developed a new class of porous GaN semiconductor material, which according to the company offers performance improvements over current materials. In November 2020, the company announced what it says is the first commercial native red LED epiwafer for micro-LED applications.
Porotech announces the world's first red GaN microLED epiwafer
Cambridge University spin-out Porotech has launched a native red GaN LED epiwafer for microLED applications. The company says this is the industry's first commercial red GaN epiwafer.
Current red LEDs are mostly produced from aluminum indium gallium phosphide (AlInGaP) materials. These materials show a drastic efficiency drop as the LED side decreases (due to their large carrier diffusion lengths and high surface recombination velocity) and in addition a hybrid AlInGaP and GaN RGB device is more difficult to drive. This is why it is beneficial to produce red LEDs from GaN materials.
