300 mm - Page 2

MicroLED display technology developer X Display Company (XDC) announced that it installed the world's first 300 mm elastomer stamp based mass MicroLED transfer equipment late in 2020. This tool was installed in the US and the company hopes to start shipping several similar tools for its customers later in 2021.

XDC spun out of X-celeprint in 2019 and retained the equipment organization from that transaction. XDC has over 15 years of experience with mass transfer micro printing technologies, and is offering a range of tools for microLED transfer, suitable for R&D work and industrial-scale production.

Global digital signage solution provider STRATACACHE is embarking on a project to construct a microLED display production line in Eugene, Oregon. The company aims to start production in this fab at around 2022-2023, with plans to adopt these microLED displays in its own solutions.

The new factory (E4) will be a complete microLED production line, from epiwafer (on 300 mm silicon wafers), through transfer process and to final module assembly. The company plans to produce a wide range of displays, from tablet-sized panels to large-area displays. Some of these displays will be flexible and transparent as the company sees a market demand for such technologies. The yearly capacity of the E4 is expected to start at a 1 million square meters per year.

France-based 3D GaN LED developer Aledia announced that it has produced its first nanowire microLED chips on 300 mm silicon wafers, at the CEA-Leti pilot line. Producing microLEDs on large wafers is more cost effective and will enable integration with smaller-node electronics.

Earlier this year Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. The company already raised 80 million Euros towards that goal. The new fab will use Veeco's 300 mm MOCVD systems.

German-based GaN-on-Si developer ALLOS announced that it has sold its high-power electronics and RF business to AZUR SPACE. ALLOS will now focus its business on the microLED display market.

ALLOS Semiconductors developed its GaN-on-Si epiwafer technology for both high power electronics and Micro LED applications, but the time has come to focus on one market. The company says its 200 and 300 mm epiwafer technology is crucial in meeting the uniformity, crystal quality and manufacturability requirements of the novel Micro LED display applications.

German-based GaN-on-Si developer ALLOS has applied its technology to large 300 mm epiwafers. ALLOS says that scaling up to 300 mm wafers enables higher production efficiencies and thus lower costs. ALLOS estimates that the higher area utilization alone accounts for a cost advantage of 40% compared to standard LED wafers. Standard 300 mm silicon line tools also offer higher production uniformity and yield.

ALLOS demonstrated the 300 mm scale-up using a reactor made by Veeco who announced selling the first 300 mm GaN reactor to a leading-edge semiconductor fab just some month ago and also showed 300 mm wafer data at CES. ALLOS reports a wavelength uniformity of consistently below 1 nm and "all other production requirements like bow of

Earlier in January, Belgium-based MICLEDI announced that it raised 4.5 million Euro to develop next-generation MicroLED microdisplays for AR applications.

We had a short talk with MICLEDI's CEO, Sean Lord, who helped us understand a bit more about the company's technology and goals. MICLEDI is indeed focused entirely on the AR market, and so aims to provide display engines that will be extremely bright (over 10 million nits), efficient, and with a very small footprint. In addition costs are also important for the future consumer AR market.

MICLEDI, established in Belgium in 2019 as a spin-off from IMEC, announced that it raised €4.5 million to develop next-generation microLED microdisplays for AR applications.

MICLEDI says that it displays will be the smallest and possible on the market - enabled by its new integration technology for microLED on 300 mm wafers, developed in collaboration with imec.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has successfully developed the world’s first GaN on Silicon-based Red LED.

Red LEDs are typically based on AlInGaP materia, or are color-converted from blue LEDs. These red LEDs limit the efficiency and the ability to create ultra-fine pitch sub pixels. Plessey says that InGaN red LEDs will also offer lower manufacturing costs, scalability to larger 200 mm or 300 mm wafers and better hot/cold factor over incumbent AlInGaP-based Red.

France-based 3D GaN LED developer Aledia announced its Series-C Financing round, totaling $36 million. Its existing investors participated in this round, and Aledia also announced that Intel Capital has joined as a new investor.

Aledia also says that it is developing next-generation Micro-LED displays with several large industrial partners. Aledia is developing both mobile displays (for smartphones, tablets, etc) and micro displays for AR/VR applications.