Native red - Page 2

Porous-GaN material platform developer Porotech announced that it has created the world's first microLED microdisplay based on a native red InGaN LED. The microdisplay is a 0.55" diagonal panel with a resolution of 960x540.

Porotech says that its native InGaN red LEDs will offer higher efficiency than currently-used AlInGaP red LEDs. Developing an RGB microdisplay all from InGaN chips will also offer easier driving and process design.

Porous-GaN material platform developer Porotech announced a partnership with Jade Bird Display (JBD). Under the agreement, Porotech provide JBD with its porous gallium nitride (GaN) technology.

Porotech says its native red InGaN LED epiwafer is not commercial. JBD now plans to use Porotech's porous GaN templates to manufacture InGaN-based red micro-LED displays for use in applications such as VR/AR headsets, AR smart sports goggles and head-up displays.

Cambridge University spin-out Porotech has launched a native red GaN LED epiwafer for microLED applications. The company says this is the industry's first commercial red GaN epiwafer.

Current red LEDs are mostly produced from aluminum indium gallium phosphide (AlInGaP) materials. These materials show a drastic efficiency drop as the LED side decreases (due to their large carrier diffusion lengths and high surface recombination velocity) and in addition a hybrid AlInGaP and GaN RGB device is more difficult to drive. This is why it is beneficial to produce red LEDs from GaN materials.

GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon substrates.

Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)- based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOS's GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUST's red LED stack.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has successfully developed the world’s first GaN on Silicon-based Red LED.

Red LEDs are typically based on AlInGaP materia, or are color-converted from blue LEDs. These red LEDs limit the efficiency and the ability to create ultra-fine pitch sub pixels. Plessey says that InGaN red LEDs will also offer lower manufacturing costs, scalability to larger 200 mm or 300 mm wafers and better hot/cold factor over incumbent AlInGaP-based Red.