Researchers from Kookmin University developed new GaN submicron Fin-LEDs, and a face-selective dielectrophoretic assembly process
Researchers from Korea's Kookmin University have developed a new GaN-based fin-LED chip material and pixel process technology, saying that this innovation may be the key to overcome the limitations of current microLED technologies.
The researchers developed a viable pixel manufacturing process that vertically assembles sub-micron-sized fin-LEDs using a face-selective dielectrophoresis (DEP) assembly method. The GaN-based sub-micron-sized fin-LEDs are designed to maximize performance while minimizing costs related to the chips and pixelation process. This technology significantly enhances extraction light efficiency by vertically aligning the fin-LEDs, and it enables the implementation of chip materials and pixel manufacturing processes that significantly reduce production costs.